By L. Marton

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Opt. Am. 43, 78 (1953); 30 P. GORLICH 18. W. M. Gawriljuk, J . Tech. Phys. ) 26, 2469 (1955). 18a. P. G. Borsjak, W. F. Bibik, and 0. G. Sarbei, Zzvest. Akad. , Ser. Fiz. 22, 566 (1958). 19. P. Gorlich, 2. Physik 109, 374 (1938); 116, 704 (1940); G. Maurer, ibid. V. , Progr. Phys. Sci. ) 69,371 (1956). 20. A. L. Hughes and L. A. ” McGraw-Hill, New York, 1932. 21. P. Gorlich, 2. Physik 116, 704 (1940); A. Lallemand and M. Duchesne, 2. angew. Math. u. Phys. 1, 195 (1950); F. Eckart, Ann. Physik [6], 16,322 (1955).

27, 966 (1956); P. Gorlich, A. Krohs, H. J. Pohl, and L. Schmidt, Exptl. Tech. d. Physik 6, 1 (1957). 4. W. S. Chasanow and S. G. Jurow, J . Tech. Phys. ) 22, 744 (1952); H. Miyazawa, J . Phys. Japan 8, 169 (1953); S. W. Wonssowski, A. W. Sokolow, and A. S. Wexler, Progr. Phys. Sci. ) 66, 477 (1955); Z. Naray, Ann. Physik [6] 20, 386 (1957). 5. L. N. Bychowskajaand Yu. M. Kuschnir, J . Tech. Phys. ) 26,2477 (1955); A. I. Frimer and A. M. Gerasimova, ibid. 26, 726 (1956). 6. J. A. Burton, Phys. Rev.

This may be traced back to a n annihilation of excitons on the surface of the emitter. Among the model semiconductors investigated so far, CdS obviously stands out because of some peculiarities. The most important of these 22 P. GORLICH peculiarities is that the character of the energy distribution of the electrons released from CdS is completely different from that found in other semiconductors, as PbS, Te, or Se. Figure 13 exhibits the evidence for this result. The curves in Fig. 13a illustrate the energy distribution of the photoelectrons originating from a PbS layer a t different photofrequencies in the interval -5 to 6 ev, obtained by graphical differentiation from the currentvoltage curves.

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Advances Electronics and Electron Physics. Vol. XI by L. Marton


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